IRVINE, Calif.--Japan's Toshiba Corp. announced what the company claims are the world's lowest noise radio-frequency (RF) transistors, based on silicon germanium (SiGe) process technology.
Toshiba's second-generation SiGe transistors have a noise figure comparable to much more expensive Gallium Arsenide (GaAs) products. The new transistors are targeted for low-noise amplifiers (LNA) used in wireless local area networks and global positioning systems.
The devices, which have a low-noise figure of 0.52 decibels (dB), are developed via a epitaxial-based bi-polar transistor process. The devices are packaged in Toshiba's 4-pin TESQ package, which measure 1.2- x 1.2- x 0.52-mm.
Samples of Toshiba's second-generation SiGe transistors will be available in March 2003, with production quantities set to be available in Sept. 2003. Sample pricing is set at $0.42 each.
